Electronic structure of InAs quantum dots with GaAsSb strain reducing layer: Localization of holes and its effect on the optical properties

APPLIED PHYSICS LETTERS

Klenovsky, P; Krapek, V; Munzar, D; Humlicek, J, 2010: Electronic structure of InAs quantum dots with GaAsSb strain reducing layer: Localization of holes and its effect on the optical properties. APPLIED PHYSICS LETTERS 97(20), doi: 10.1063/1.3517446

Research Groups:

• Fabrication and Characterisation of Nanostructures - Tomáš Šikola

CEITEC authors:

• Vlastimil Křápek, Ph.D.