Influence of Boron Antisite Defects on the Electrical Properties of MBE-Grown GaAs Nanowires

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS

Lancaster, S. ; Andrews, AM.; Stoeger-Pollach, M. ; Steiger-Thirsfeld, A. ; Groiss, H.; Schrenk, W.; Strasser, G.; Detz, H., 2019: Influence of Boron Antisite Defects on the Electrical Properties of MBE-Grown GaAs Nanowires . PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS 256(5), p. 1800368 - 5, doi: 10.1002/pssb.201800368; FULL TEXT

Research Groups:

• Epitaxial Materials and Nanostructures - Hermann Detz

CEITEC authors:

• Dipl.-Ing. Dr.techn. Hermann Detz