Atomic layer deposition system Ultratech/CambridgeNanoTech Fiji 200 (ALD)
Detailed description:
Atomic Layer Deposition is a deposition technique for very thin layers with the thickness control down to a single atomic layer. It belongs to the CVD techniques family. The thickness precision is achieved by pulsed deposition, where first a metal-containing precursor is introduced into the chamber and after a short time (allowing for monolayer adsorption) the chamber is pumped down. The following step is exposure to the oxidizing precursor (for oxides) or nitrogen-containing precursor (for nitrides). Thus, a monolayer of the target material is grown. The metal-containing precursors are usually organometallic ones, for oxidation a water or oxygen plasma can be used, nitridation is done using nitrogen plasma. To achieve the deposition in the ALD mode, the sample is heated up to a certain temperature, for most processes being in the range from 150 to 300 °C.
Publications:
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NG, S.; IFFELSBERGER, C.; MICHALIČKA, J.; PUMERA, M., 2021: Atomic Layer Deposition of Electrocatalytic Insulator Al2O3 on Three-Dimensional Printed Nanocarbons. ACS NANO 15(1), p. 686 - 12, doi: 10.1021/acsnano.0c06961; FULL TEXT
(TITAN, ALD, KRATOS-XPS, VERIOS)
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Chmela, O., 2020: Progress toward the development of single nanowire-based arrays for gas sensing applications. PH.D THESIS , p. 1 - 199
(ALD, DWL, KAUFMAN, DIENER, SUSS-MA8, SUSS-RCD8, RAITH, MAGNETRON, EVAPORATOR, RIE-FLUORINE, SCIA, DEKTAK, ICON-SPM, NANOCALC, MPS150, WIRE-BONDER)
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Rovenská, K., 2020: Dielectric metasurfaces as modern optical components. MASTER´S THESIS , p. 1 - 57
(MAGNETRON, DEKTAK, KRATOS-XPS, MIRA, EVAPORATOR, VERIOS, RIE-FLUORINE, ALD)
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KAUSHIK, P.; ELIÁŠ, M.; MICHALIČKA, J.; HEGEMANN, D.; PYTLÍČEK, Z.; NEČAS, D.; ZAJÍČKOVÁ, L., 2019: Atomic layer deposition of titanium dioxide on multi-walled carbon nanotubes for ammonia gas sensing. SURFACE AND COATINGS TECHNOLOGY 370, p. 235 - 9, doi: 10.1016/j.surfcoat.2019.04.031; FULL TEXT
(ALD, EVAPORATOR, PECVD-NANOFAB, WOOLLAM-VIS, VERIOS, TITAN, KRATOS-XPS, RIGAKU3)
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Fecko, P., 2019: Gecko mimicking surfaces. MASTER´S THESIS , p. 1 - 52
(SUSS-RCD8, SUSS-MA8, DWL, DRIE, LYRA, ALD, RIE-FLUORINE, ICON-SPM, PARYLENE, XEF2)
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HRDÝ, R.; PRÁŠEK, J.; FILLNER, P.; VANČÍK, S.; SCHNEIDER, M.; HUBÁLEK, J.; SCHMID, U., 2019: Development of HfO2/Al2O3 Stack for On-Chip Capacitor Applications
. INTERNATIONAL SPRING SEMINAR ON ELECTRONICS TECHNOLOGY ISSE , p. 1 - 4, doi: 10.1109/ISSE.2019.8810156; FULL TEXT
(ALD, SUSS-MA8, EVAPORATOR, SUSS-RCD8, DWL, RIE-CHLORINE)
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Pokorný, D., 2019: Morphology study of ultra thin layers by XPS analysis of multiple peaks of a single element. MASTER´S THESIS , p. 1 - 71
(WOOLLAM-VIS, ALD, KRATOS-XPS)
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Vida, J., 2019: Deposition of ternary oxides with titanium and characterization of their optical and electrical properties. MASTER´S THESIS , p. 1 - 50
(ALD, WOOLLAM-VIS, VUVAS, EVAPORATOR, SUSS-MA8, SUMMIT, KRATOS-XPS, RIGAKU3)
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Vančík, S., 2018: MEMS microhotplate platform for chemical sensors. MASTER´S THESIS , p. 1 - 68
(DWL, ALD, MAGNETRON, EVAPORATOR, RIE-FLUORINE, SUSS-MA8, DEKTAK, MPS150, RIE-CHLORINE)
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Kaushik, P.; Elias, M.; Prasek, J.; Pytlicek, Z.; Zajickova, L., 2018: Titanium dioxide modified multi-walled carbon nanotubes as room temperature NH3 gas sensors. ELECTRONICS TECHNOLOGY (ISSE) , p. 959 - 961
(ALD, TERS, LYRA)
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Procházka, P., 2018: Fabrication of graphene and study of its physical properties. PH.D. THESIS , p. 1 - 139
(ALD, DIENER, EVAPORATOR, MIRA, PECVD, TERS, WIRE-BONDER)
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STARÁ, V.; PROCHÁZKA, P.; MAREČEK, D.; ŠIKOLA, T.; ČECHAL, J., 2018: Ambipolar remote graphene doping by low-energy electron beam irradiation. NANOSCALE 10(37), p. 17520 - 5, doi: 10.1039/c8nr06483k; FULL TEXT
(ALD, DIENER, DWL, EVAPORATOR)
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PROCHÁZKA, P.; MAREČEK, D.; LIŠKOVÁ, Z.; ČECHAL, J.; ŠIKOLA, T., 2017: X-ray induced electrostatic graphene doping via defect charging in gate dielectric. SCIENTIFIC REPORTS 7, p. 1 - 7, doi: 10.1038/s41598-017-00673-z; FULL TEXT
(MIRA, DIENER, ALD, WIRE-BONDER)
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Xiao, N.;Villena, M.A.; Yuan, B.; Chen, S.; Wang, B.; Eliáš, M.; Shi, Y.; Hui, F.; Jing, X.; Scheuermann, A.; Tang, K.; McIntyre, P.C., 2017: Resistive Random Access Memory Cells with a Bilayer TiO2/SiOX Insulating Stack for Simultaneous Filamentary and Distributed Resistive Switching. ADVANCED FUNCTIONAL MATERIALS 27(33), p. 859 - 7, doi: 10.1002/adfm.201700384; FULL TEXT
(ALD)
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Musálek, T., 2016: Semiconductor nanowire growth utilizing alloyed catalyst. MASTER’S THESIS , p. 1 - 52
(UHV-MBE, VERIOS, LYRA, MIRA, ALD)
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Andrýsek, M., 2016: Preparation of surfaces with diffusion barrier for studying initial phase of semiconductor nanowire growth. BACHELOR’S THESIS , p. 1 - 22
(LYRA, VERIOS, ALD, TERS)
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Švarc, V., 2015: Shielding effect of oxide isolating layer on surface potential measured by Kelvin probe force microscopy. MASTER´S THESIS , p. 1 - 50
(LYRA, ALD, DIENER, WIRE-BONDER)
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Lišková, Z., 2015: Fabrication of Nanostructures and Nanodevices for Nanoelectronics and Spintronics. PH.D. THESIS , p. 1 - 106
(LYRA, MIRA, DIENER, NANOCALC, DWL, EVAPORATOR, WIRE-BONDER, ALD)
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