Temperature effect on Al predose and AlN nucleation affecting the buffer layer performance for the GaN-on-Si based high-voltage devices

JAPANESE JOURNAL OF APPLIED PHYSICS

NOVÁK, T.; KOSTELNÍK, P.; KONEČNÝ, M.; ČECHAL, J.; KOLÍBAL, M.; ŠIKOLA, T., 2019: Temperature effect on Al predose and AlN nucleation affecting the buffer layer performance for the GaN-on-Si based high-voltage devices. JAPANESE JOURNAL OF APPLIED PHYSICS 58, p. SC1018-1 - 9, doi: 10.7567/1347-4065/ab0d00; FULL TEXT
(ICON-SPM, KRATOS-XPS)

Equipment:

• Scanning Probe Microscope Bruker Dimension Icon
• X-ray Photoelectron Spectroscopy Kratos Analytical Axis Supra

Research Groups:

• Molecular Nanostructures at Surfaces - Jan Čechal
• CF: CEITEC Nano
• Fabrication and Characterisation of Nanostructures - Tomáš Šikola

CEITEC authors:

• Martin Konečný
• Jan Čechal, Ph.D.
• Miroslav Kolíbal, Ph.D.
• Prof. Tomáš Šikola